Wide-Bandgap (WBG) semiconductors have become a crucial component in the future development of many major industries, with silicon carbide (SiC) and gallium nitride (GaN) being the most critical power components. The analysis report describes the differences between WBG power semiconductor GaN or SiC devices and silicon-based power semiconductor devices, as well as the role that GaN and SiC power components will play in the future. GaN and SiC power components of WBG semiconductors are the main objects of analysis within the report.
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Taiwan Intellectual Property Office-News-The Industry Patent Analysis Report on WBG Power Semiconductor Devices is Now Available! (tipo.gov.tw)
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